? 2007 ixys corporation, all rights reserved genx3 tm 300v igbt IXGH85N30C3 (tab) high speed pt igbts for 50-150khz switching preliminary technical information v ces = 300v i c110 = 85a v ce(sat) 1.9v t fi typ = 70ns symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 300 v v ge(th) i c = 250 a, v ce = v ge 2.5 5.0 v i ces v ce = v ces 30 a v ge = 0v t j = 125 c 750 a i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 85a, v ge = 15v 1.64 1.9 v t j = 125 c 1.67 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 300 v v cgr t j = 25 c to 150 c, r ge = 1m ? 300 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c (limited by leads) 75 a i c110 t c = 110 c (chip capability) 85 a i cm t c = 25 c, 1ms 420 a i a t c = 25 c 85 a e as t c = 25 c 400 mj ssoa v ge = 15v, t vj = 125 c, r g = 3.3 ? i cm = 170 a (rbsoa) clamped inductive load @ 300v p c t c = 25 c 333 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062 in.) from case for 10s 260 c m d mounting torque (to-247) 1.13/10 nm/lb.in. weight 6g ds99883a(01-08) g c e to-247 ad (ixgh) g = gate, c = collector, e = emitter, tab = collector features z high frequency igbt z square rbsoa z high avalanche capability z drive simplicity with mos gate turn-on z high current handling capability applications z pfc circuits z pdp systems z switched-mode and resonant-mode converters and inverters z smps z ac motor speed control z dc servo and robot drives z dc choppers
ixys reserves the right to change limits, test conditions, and dimensions. IXGH85N30C3 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 0.5 ? i c110 , v ce = 10v, 35 60 s pulse test, t 300 s; duty cycle, d 2%. c ies 5100 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 310 pf c res 80 pf q g 136 nc q ge i c = i c110 , v ge = 15v, v ce = 0.5 ? v ces 22 nc q gc 48 nc t d(on) 25 ns t ri 34 ns e on 0.20 mj t d(off) 100 160 ns t fi 70 ns e off 0.39 0.75 mj t d(on) 22 ns t ri 33 ns e on 0.36 mj t d(off) 120 ns t fi 101 ns e off 0.48 mj r thjc 0.375 c/w r thck 0.21 c/w inductive load, t j = 125 c i c = 0.5 ? i c110 , v ge = 15v v ce = 200v, r g = 3.3 ? ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 to-247 ad outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p inductive load, t j = 25 c i c = 0.5 ? i c110 , v ge = 15v v ce = 200v, r g = 3.3 ? preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2007 ixys corporation, all rights reserved IXGH85N30C3 fig. 1. output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 180 0 0.4 0.8 1.2 1.6 2 2.4 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 2. extended output characteristics @ 25oc 0 50 100 150 200 250 300 350 012345678910 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v 5v fig. 3. output characteristics @ 125oc 0 20 40 60 80 100 120 140 160 180 0 0.4 0.8 1.2 1.6 2 2.4 2.8 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 4. dependence of v ce(sat) on junction temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 170a i c = 85a i c = 43a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 170a 85a 43a t j = 25oc fig. 6. input admittance 0 20 40 60 80 100 120 140 160 180 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 v ge - volts i c - amperes t j = - 40oc 25oc 125oc
ixys reserves the right to change limits, test conditions, and dimensions. IXGH85N30C3 fig. 7. transconductance 0 10 20 30 40 50 60 70 80 90 100 0 20 40 60 80 100 120 140 160 180 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 10. reverse-bias safe operating area 0 20 40 60 80 100 120 140 160 180 50 100 150 200 250 300 v ce - volts i c - amperes t j = 125oc r g = 3.3 ? dv / dt < 10v / ns fig. 11. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 q g - nanocoulombs v ge - volts v ce = 150v i c = 85a i g = 10 ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res
? 2007 ixys corporation, all rights reserved IXGH85N30C3 fig. 12. inductive switching energy loss vs. gate resistance 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2 4 6 8 10 12 14 16 18 r g - ohms e off - millijoules 0.1 0.3 0.5 0.7 0.9 1.1 1.3 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 200v i c = 85a i c = 42.5a fig. 17. inductive turn-off switching times vs. junction temperature 60 70 80 90 100 110 120 130 140 150 160 170 180 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 95 100 105 110 115 120 125 t d(off) - nanoseconds t f t d(off) - - - - r g = 3.3 ? , v ge = 15v v ce = 200v i c = 85a i c = 42.5a fig. 15. inductive turn-off switching times vs. gate resistance 90 100 110 120 130 140 150 160 2 4 6 8 10 12 14 16 18 r g - ohms t f - nanoseconds 100 140 180 220 260 300 340 380 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc, v ge = 15v v ce = 200v i c = 85a i c = 42.5a fig. 13. inductive swiching energy loss vs. collector current 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 20 30 40 50 60 70 80 90 i c - amperes e off - millijoules 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 e on - millijoules e off e on - - - - r g = 3.3 ? , v ge = 15v v ce = 200v t j = 125oc t j = 25oc fig. 14. inductive swiching energy loss vs. junction temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 e on - millijoules e off e on - - - - r g = 3.3 ? , v ge = 15v v ce = 200v i c = 85a i c = 42.5a fig. 16. inductive turn-off switching times vs. collector current 30 50 70 90 110 130 150 170 15 25 35 45 55 65 75 85 i c - amperes t f - nanoseconds 95 100 105 110 115 120 125 130 t d(off) - nanoseconds t f t d(off) - - - - r g = 3.3 ? , v ge = 15v v ce = 200v t j = 125oc t j = 25oc
ixys reserves the right to change limits, test conditions, and dimensions. IXGH85N30C3 ixys ref: g_85n30c3(65)08-21-07 fig. 19. inductive turn-on switching times vs. collector current 10 20 30 40 50 60 70 80 90 20 25 30 35 40 45 50 55 60 65 70 75 80 85 i c - amperes t r - nanoseconds 18 20 22 24 26 28 30 32 34 t d(on) - nanoseconds t r t d(on) - - - - r g = 3.3 ? , v ge = 15v v ce = 200v t j = 125oc t j = 25oc fig. 20. inductive turn-on switching times vs. junction temperature 20 25 30 35 40 45 50 55 60 65 70 75 80 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds 20 21 22 23 24 25 26 27 28 29 30 31 32 t d(on) - nanoseconds t r t d(on) - - - - r g = 3.3 ? , v ge = 15v v ce = 200v i c = 42.5a i c = 85a fig. 18. inductive turn-on switching times vs. gate resistance 0 10 20 30 40 50 60 70 80 90 100 110 120 2 4 6 8 10 12 14 16 18 r g - ohms t r - nanoseconds 20 25 30 35 40 45 50 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 200v i c = 42.5a i c = 85a
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